Method of manufacturing ferroelectric memory
US6080593A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1998 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Jul 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/033
Abstract
A method of manufacturing a ferroelectric memory of MFS- or MFIS-type includes the steps of forming on a substrate an insulating layer for preventing reaction at an interface between a ferroelectric material and a silicon substrate, forming a ferroelectric layer on the insulating layer, reacting a material of the insulating layer with a material of the ferroelectric layer, to transform the insulating layer into part of the ferroelectric layer, and forming an electrode on the ferroelectric layer. Since the insulating layer is formed between a substrate and a ferroelectric material, undesirable reaction between the two substances is prevented. The insulating layer is completely absorbed into the ferroelectric layer due to diffusion during deposition of the ferroelectric layer, to form an MFS-type ferroelectric memory. When some of the insulating layer remains, the ferroelectric memory becomes an MFIS-type. However, since the remaining insulating layer, which corresponds to the insulating layer of the MFIS-type ferroelectric memory, is very thin. Accordingly, characteristics of the MFIS-type ferroelectric memory improve.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.