Amorphous silicon germanium thin film and photovoltaic element
US6080998A · kind A · utility
14Cited by
1References
10Claims
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Key dates
| Filing date | Feb 25, 1998 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Feb 25, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
An amorphous silicon germanium thin film is disclosed which contains hydrogen and germanium in concentrations of 5-10 atomic percent and 40-55 atomic percent, respectively for exhibiting the optical gap in the range of 1.30-1.40 eV. Also disclosed is a photovoltaic element incorporating the amorphous silicon germanium thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.