High voltage mosfet structure
US6081009A · kind A · utility
161Cited by
3References
1Claims
0Family size
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Key dates
| Filing date | Nov 10, 1997 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Nov 10, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/927
Abstract
A high voltage MOSFET with low on-resistance and a method of lowering the on-resistance for a specific device breakdown voltage of a high voltage MOSFET. The MOSFET includes a blocking layer of a first conductivity type having vertical sections of a second conductivity type or the blocking layer may include alternating vertical sections of a first and second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.