Semiconductor device having improved protective circuits
US6081015A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 26, 1999 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Mar 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
In a semiconductor device, in order to protect an interior of the device, protective circuits are provided. The protective circuits include a first circuit connected between the first terminal and a negative potential line, a second circuit connected between the first terminal and a ground potential line, and a third circuit connected between the ground potential line and a second terminal. The first circuit consists of a MOS transistor having a drain connected with the first terminal, a source connected with the negative potential line, and a gate connected with the first terminal or the negative potential line. The second circuit consists of a MOS transistor having a drain connected with the first terminal, a source connected with the ground potential line, and a gate connected with the first terminal or the ground potential line. The third circuit consists of a MOS transistor having a drain connected with the second terminal, a source connected with the ground potential line, and a gate connected with the second terminal or the ground potential line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.