Method to write/read MRAM arrays
US6081445A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1998 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Jul 27, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of writing/reading an array of magnetoresistive cells, with each cell in the array having associated therewith a first current line that generates an easy axis field and a second orthogonal current line that generates a hard axis field when current is applied thereto. The method includes initially applying a current to the second orthogonal current lines in a first direction that generates a hard axis field to switch end domains in all cells in the array to a fixed direction, and selecting a cell in the array for write/read using a half-select technique including supplying a half-select current to the first current line associated with the selected cell to generate a half-select easy axis field and, simultaneously, supplying a half-select current in the first direction to the second current line associated with the selected cell to generate a half-select hard axis field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.