Combined precharging and homogenizing circuit

US6081469A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Helmut Schneider · Hersbruck, DE
• Michael Wagner · Bad Abbach, DE

Key dates

• Filing date: Aug 13, 1999
• Grant date: Jun 27, 2000
• Expiry date: Aug 13, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/00
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A combined precharging and homogenizing circuit for a semiconductor memory configuration made up of a memory cell array having a multiplicity of bit line pairs. The combined precharging and homogenizing circuit containing a first and a second field-effect precharging transistor and a homogenizing transistor connected in series between the two precharging transistors. Gates of the two precharging transistors and of the homogenizing transistor are connected together to form a common gate. Sources of the precharging transistors are connected together to form a common source. A drain of the first precharging transistor and a drain of the homogenizing transistor are connected together to form a common drain and the source of the homogenizing transistor and the drain of the second precharging transistor are connected together to form a common source/drain. In the combined precharging and homogenizing circuit, the invention provides that the common gate is angled and is configured rotated through about 45.degree. in relation to a longitudinal direction of the bit lines. In addition, the common drain and the common source/drain are drawn forward beyond the common gate defining protruding r…