Semiconductor laser device and optical disk apparatus using the same
US6081541A · kind A · utility
12Cited by
9References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1999 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Jul 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.