Method of forming capacitors in a semiconductor device

US6083805A · kind A · utility

Assignee

• Mitel Corporation · CA

Inventors

• Luc Ouellet · Granby, CA
• Stephane Blain · Sherbrooke, CA

Key dates

• Filing date: May 19, 1999
• Grant date: Jul 4, 2000
• Expiry date: May 19, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A method of forming capacitors in a semiconductor device, involves providing a first insulating layer, providing a first mask with an array of apertures over the insulating layer, and etching an array of holes in the first insulating layer through said apertures in said first mask. A first electrode layer extending into the holes is formed over the first insulating layer. A second dielectric layer extends into the holes on said first electrode layer. A second electrode layer extends into the holes on the dielectric layer. The capacitors are patterned with a second mask. The capacitors can be subsequently connected into the circuit in a sequence of processing steps that only involve the addition two extra masks beyond those conventionally employed in integrated circuit manufacture.