Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
US6084175A · kind A · utility
95Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1995 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | Nov 14, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Textured semi-conductor devices, such as macro textured buried-contact solar cells, are produced with special front contact trenches to increase efficiency and decrease costs. In order to produce the front contact trenches, front channels and narrower metallization grooves are cut in the semi-conductor body. The front contact trenches are plated to form attractive conductive buried contacts comprising flush metallization fingers and bus bars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.