Complimentary metal oxide semiconductor imaging device
US6084229A · kind A · utility
36Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1998 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | Mar 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/78
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A CMOS imager includes a photosensitive device such as a photosensitive device such as a photodiode or photogate having a sense node coupled to an FET located adjacent to the photosensitive region. Another FET, forming a differential input pair of an operational amplifier is located outside of the array of pixels. The operational amplifier is configured for unity gain and a row or column of input FETs is connected in parallel. A correlated double sampler is connected to the output of the operational amplifier for providing a fixed pattern noise free signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.