Low voltage four-layer device with offset buried region
US6084253A · kind A · utility
60Cited by
4References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 1, 1999 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | Mar 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
A four-layer low voltage thyristor device (30) in which the breakover voltage is independent of the holding current. Rather than forming a buried region (38) underlying the emitter region (42), the buried region 38 is formed laterally to the side of the emitter (42). In order to form a low breakover voltage device, the buried region (38) is required to be highly doped, but the resulting junction (40) does not approach the emitter junction (48). A low breakover voltage (5 V-12-V) thyristor can thus be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.