Photodiode having charge transfer function and image sensor using the same
US6084259A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1999 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | Jun 29, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
The present invention relates to an image sensor; and, more particularly, to a CMOS image sensor employing photodiodes which linearly increase the ability of keeping up photogenerated charges. In accordance with the present invention, a unit pixel of a CMOS image sensor comprises: a photodiode including: a) an N-type semiconductor region and a P-type semiconductor region for a PN junction to which a reverse bias is applied; and b) a highly doped region formed on one of the N-type semiconductor region and the P-type semiconductor region for collecting carriers of electron-hole pairs generated in a depletion region of the PN junction so that a voltage drop of the reverse bias is linear; and an image data processing unit for producing an image data in response to the carriers transferred from the highly doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.