Charge sensitive amplifier with high common mode signal rejection
US6084461A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1996 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | Nov 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/345
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A charge sensitive amplifier with high common mode signal rejection includes an NPN bipolar junction transistor (BJT) and a P-channel metal oxide semiconductor field effect transistor (MOSFET) connected in a totem pole circuit configuration. The BJT base terminal receives a dc reference voltage, the MOSFET gate terminal receives the incoming data signal, the MOSFET drain terminal is grounded and the BJT collector terminal provides the output voltage signal and is biased by the power supply through a resistive circuit element. The MOSFET operates as a source follower amplifier with the transconductance of the BJT serving as the load at the source terminal, while the BJT operates as a common emitter amplifier with the transconductance of the MOSFET providing emitter degeneration. The signal gains of such source follower and common emitter amplifiers are substantially equal and of opposite polarities. Therefore, any common mode signal components due to common mode input signals present at the input terminals (i.e., the BJT base and MOSFET gate terminals) which would otherwise appear within the output signal are substantially cancelled, thereby resulting in a high degree of common mode…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.