Semiconductor laser apparatus
US6084895A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1997 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | Jul 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0683
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser element which is composed of a compound semiconductor consisting of GaAs or the like, a silicon laser mount which is disposed beneath the semiconductor laser element so as to position the element, and on which an electrode layer as an electrode for the semiconductor laser element is formed, a heat sink which is disposed beneath the laser mount so as to dissipate, through the laser mount, the heat generated by the semiconductor laser element are mutually secured through hot contact bonding. The laser mount has a concave portion on the side opposite to its main surface on which the semiconductor layer element is secured, and the concave portion contains a heat dissipating body which is integrated thereinto and is made of copper having higher thermal conductivity than silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.