Solution for forming ferroelectric film and method for forming ferroelectric film
US6086665A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Aug 18, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Aug 18, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Acetylacetone and an aqueous nitric acid are included in a solution in which organic metal compounds of metals constituting a ferroelectric in an organic solvent thereby forming a ferroelectric film formation solution. The solution is applied to a substrate, followed by drying and baking to obtain a ferroelectric film. As a consequence, even when forming a ferroelectric film such as a PZT or PLZT film containing a II group element in the periodic table, a stable ferroelectric film formation solution which prevents neither crystallization nor gelation and is reduced in a change with time in the viscosity thereof can be obtained. A ferroelectric film which contains a II group element and has excellent ferroelectric properties can be thus produced with ease.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.