Method of sputtering a carbon protective film on a magnetic disk with high sp.sup.3 content
US6086730A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 1999 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Apr 22, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/851
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Sputtering method for producing amorphous hydrogenated carbon thin films with high sp.sup.3 content. By sputtering the carbon with a pulsed DC power supply having high voltage peaks, a carbon film with remarkably high sp.sup.3 bonding fraction can be obtained. Previously, carbon films with a very high sp.sup.3 fraction film with content as high (e.g. as 80%) could only be produced by methods such as filtered cathodic arc deposition or chemical vapor deposition methods (CVD) such as plasma-enhanced chemical vapor deposition (PE-CVD) and ion-beam deposition operating at some narrowly defined range of deposition conditions. It is very advantageous to use sputtering to create a high sp.sup.3 content film, since sputtering is more manufacturable and has higher productivity compared to CVD or ion-beam deposition methods. The resultant carbon film has excellent durability and corrosion resistance capability down to very low thickness. Also compared to PE-CVD and ion-beam deposition, the new sputtering process produce much less particles and the process can be run on a manufacturing tool for much longer time, thereby increasing the productivity of the machine, and providing disks with high…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.