Method for fabricating dual gate semiconductor device
US6087246A · kind A · utility
5Cited by
13References
37Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 23, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Jan 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method for fabricating a semiconductor device includes the steps of forming a gate insulating film on a substrate, forming semiconductor layer on the gate insulating film, selectively removing the semiconductor layer to form first and second gate electrodes, implanting ions of a first conductive type into the first gate electrode, and implanting impurity ions of a second conductive type into the second gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.