High density self-aligned antifuse
US6087677A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 10, 1997 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Nov 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is an antifuse structure comprising an insulation layer between a top conductor and a bottom conductor. The insulation layer has a via. A resistive layer is adjacent the via and a plug is adjacent the resistive layer. The plug is in the via and is also adjacent the top conductor. The present invention also provides a method for fabricating the antifuse on a base. A bottom conductor is deposited on the base. An insulation layer are deposited adjacent the bottom conductor. An antifuse via is etched into the insulation layer. A resistive layer is deposited in the antifuse via. A plug is deposited. The plug extends into the antifuse via. A top conductor is deposited and patterned adjacent the plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.