Semiconductor device having a cavity and method of making
US6087701A · kind A · utility
18Cited by
10References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1997 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Dec 23, 2017 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device (50) has a sensing element (30) and a transistor (40). The sensing element (30) is formed in a cavity (11) in a substrate (10). The sensing element (30) is formed in part using an epitaxial deposition process that fills the cavity (11) with a conductive material (18) such as polysilicon. A dielectric layer (17) is used to electrically isolate the sensing element (30) from the substrate (10).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.