Photodetector and photodetection circuit
US6087703A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photodetector device for converting incident light to an electrical signal has two pn junctions or two MOS junctions fabricated in a silicon substrate. Preferably, a control terminal is provided between the two junctions. A photodetection circuit including a photodetector device has a variable sensitivity and can change the polarity of the output of the photodetector device. For example, the photodetection circuits may have a circuit for providing a bias voltage of one of the two polarities to the photodetector device. The photodetection circuit may have a circuit for changing the polarity of the output signal from the photodetector device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.