Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate
US6089183A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1998 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Mar 6, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In performing plasma etching or plasma CVD, a gas containing an interhalogen compound gas or a XeF.sub.2 gas is used as a process gas. Such a process gas generates, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in the above etching so as to contribute to the suppression of film formation. For example, the XeF.sub.2 gas, a BrF.sub.3 gas, a BrCl gas are used in the cases of etching a silicon dioxide film, a silicide film, and a polysilicon film, respectively. On the surface of a substrate is formed a non-volatile protective film so as to improve the profiles of an opening. At the wall surface of a reaction chamber which is barely influenced by the plasma, the deposition species is turned into a volatile material (e.g., SiF.sub.4) so as to suppress the deposition of reaction products thereon. If the interhalogen compound gas, XeF.sub.2 gas, or the like is added to a main gas for performing CVD, the same effects can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.