Magnetoresistance effect element and magnetoresistance device
US6090498A · kind A · utility
25Cited by
3References
46Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 15, 1997 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Oct 15, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a magnetoresistance effect element, a pinning layer (antiferromagnetic layer) has a composition of Ru--Mn or Ru--M--Mn where M represents at least one selected from Rh, Pt, Pd, Au, Ag, and Re, and impurity concentrations of the pinning layer are regulated. Accordingly, there can be provided the magnetoresistance effect element having a magnetic multilayered film which is excellent in corrosion resistance, thermal stability and magnetic field sensitivity and has a large MR change ratio, as well as a magnetoresistance device, such as a magnetoresistance effect type head or the like, using such a magnetoresistance effect element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.