Multi-resin material for an antireflection film to be formed on a workpiece disposed on a semiconductor substrate
US6090523A · kind A · utility
5Cited by
5References
6Claims
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Key dates
| Filing date | Apr 3, 1998 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Apr 3, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An antireflection film includes a base resin and an additive resin, the additive resin having a dry etching rate higher than that of the base resin. A photoresist pattern is formed and the antireflection film is selectively etched using the photoresist pattern as a mask. The molecular weight and weight percent of the additive resin are selected to provide an etching rate for the antireflection film that permits selective removal of the antireflection film while leaving an effective amount of the photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.