Method for fabricating an SOI substrate
US6090688A · kind A · utility
15Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1996 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Nov 15, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an SOI substrate is provided, which has an active substrate formed as a thin film. The method comprises the steps of: using a both-side polishing apparatus to polish both sides of a supporting substrate 1; bonding an active substrate 2 onto the supporting substrate 1. to form a bonded-wafer; removing an unbonded portion formed at the circumference of the bonded-wafer; flat grinding the active substrate 2 to reduce the thickness thereof; etching the active substrate 2 by spin etching; and processing the active substrate to be a thin film by PACE processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.