Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film
US6091081A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1997 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Dec 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and manufacturing process of a low dielectric constant interlayer insulating film used between wiring layers and semiconductor devices using such film are disclosed. The insulating film which can withstand in an actual process comprises an amorphous carbon fluoride film. A diamond like carbon film and a silicon excess layer are disposed on both sides of the amorphous carbon fluoride film to be inserted between the wiring layers, whereby adhesion to wiring and another insulating film contacting it is significantly enhanced. In addition, a silicon based insulating film is disposed and flattened on a multilayer film containing an amorphous carbon fluoride film buried with a wiring layer, and is used as a hard mask for anisotropically etching the diamond like carbon film and the amorphous carbon fluoride film with oxygen plasma to form a via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.