Reverse blocking IGBT
US6091086A · kind A · utility
19Cited by
32References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 6, 1997 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Jun 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
Abstract
A method of forming a power integrated circuit device (100) including a semiconductor layer of first conductivity type. The semiconductor layer includes a front-side surface (103), a backside surface (116), and a scribe region (117). The semiconductor layer further including a plurality of active cells on the front-side surface (103). The present method includes forming a backside layer (116) of second conductivity type overlying the backside surface, and forming a continuous diffusion region (117) of the second conductivity type through the semiconductor layer to connect the scribe region to the backside layer (116).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.