Patent · US Expired

Macro cell

US6091088A · kind A · utility

3Cited by
1References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 28, 1998
Grant dateJul 18, 2000
Priority date
Expiry dateJan 28, 2018

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/907

Abstract

A macro cell of field effect transistors includes source-drain areas respectively divided into a contact area and a non-contact area. One source-drain area of two of the source-drain areas located on opposite sides of the effective width portion of a gate electrode has a contact area at an upper portion and a non-contact area at a lower portion while the other source-drain area has the non-contact area at its upper portion and the contact area at its lower portion. The distance between effective width portions of gate electrodes where the non-contact area is located is smaller than the distance between effective width portions of gate electrodes where the contact area is located.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.