Compact nonvolatile memory using substrate hot carrier injection
US6091634A · kind A · utility
16Cited by
4References
34Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 15, 1998 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Sep 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6892
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A split gate nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. A select transistor can have a source which also acts as the emitter of a lateral bipolar transistor. The lateral bipolar transistor operates as a charge injector. The charge injector may provide electrons for substrate hot electron injection of electrons onto the floating gate for programming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.