Patent · US Expired

Solid immersion lens with semiconductor material to achieve high refractive index

US6091694A · kind A · utility

35Cited by
8References
10Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 8, 1998
Grant dateJul 18, 2000
Priority date
Expiry dateSep 8, 2018

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11B33/12
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

An immersion system for a magneto-optical storage device has a spherical-segment-shaped lens. The lens is formed of material that is transparent to the electromagnetic radiation of the wavelength .lambda. at which the device is operated, and preferably of a semiconductor material. The lens has a first refractive index n.sub.1 which is greater than that of air. A layer with a higher refractive index than the lens is disposed in the propagation path of the electromagnetic radiation. The layer is composed of a material with a second refractive index n.sub.2 that is greater than the first refractive index n.sub.1 of the material of the lens.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.