Method and a device for epitaxial growth of objects by chemical vapor deposition
US6093253A · kind A · utility
477Cited by
16References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 16, 1998 |
| Grant date | Jul 25, 2000 |
| Priority date | — |
| Expiry date | Apr 16, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A device for epitaxial growth of objects by Chemical Vapor Deposition on a substrate comprises a susceptor adapted to receive the substrate and members for heating walls of the susceptor surrounding the substrate and thereby the substrate and a gas mixture fed to the substrate for the growth. The device comprises also members for holding the substrate in the path of the gas mixture through the susceptor at a distance from internal walls thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.