Semiconductor device and production method of a semiconductor device having a capacitor
US6093575A · kind A · utility
11Cited by
8References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 9, 1998 |
| Grant date | Jul 25, 2000 |
| Priority date | — |
| Expiry date | Apr 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
When a capacitor is formed on a semiconductor substrate, a lower electrode of the capacitor is first formed. After an insulating film is formed on the lower electrode, it is selectively etched until the lower electrode is exposed, and in this way, a hole portion is formed in the insulating film. After a ferroelectric film is formed inside the hole portion and on the insulating film, the ferroelectric film is polished and removed by a chemical-mechanical polishing method in such a manner as to leave the ferroelectric film inside the hole portion. Thereafter, an upper electrode of the capacitor is formed on the ferroelectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.