Method of manufacturing inductor device on a silicon substrate thereof
US6093599A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 1999 |
| Grant date | Jul 25, 2000 |
| Priority date | — |
| Expiry date | Jan 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a on silicon substrate, specifically to an inductor device and manufacturing method thereof for enhancing the quality factor of the inductor by disposing trenches on a silicon substratre, and by filling the inside of the trenches with polycrystalline polysilicon not doped with impurities. The present invention provides an inductor device and a manufacturing method thereof which can improve the quality factor by increasing resistance of the substrate by forming deep trenches disposed in specific patterns on a low-resistance silicon substrate and filling polycrystalline silicon not doped with impurities, and by reducing parasitic capacitance between the inductor and the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.