Inductively coupled plasma chemical vapor deposition technology
US6093660A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1997 |
| Grant date | Jul 25, 2000 |
| Priority date | — |
| Expiry date | Mar 18, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/914
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is an inductively coupled plasma chemical vapor deposition method for depositing a selected thin film on a substrate from inductively coupled plasma, the method including the steps of: providing a vacuum reaction chamber including an interior bounded, in part by a dielectric shield, the dielectric shield having an amorphous silicon layer on its interior surface, and an antenna arranged outside the deposition chamber adjacent to the dielectric shield where RF power is applied; placing the substrate on a stage with the chamber; exhausting the vacuum reaction chamber leaving a vacuum state; introducing a reactant gas to the vacuum reaction chamber at a predetermined pressure; and applying RF power to the antenna, whereby inductively coupled plasma for deposition of a thin film from the reactant gas is formed within the vacuum chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.