Low temperature coefficient dielectric materials and devices comprising same
US6093668A · kind A · utility
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19Claims
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Key dates
| Filing date | Dec 29, 1998 |
| Grant date | Jul 25, 2000 |
| Priority date | — |
| Expiry date | Dec 29, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/495
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Dielectric materials comprising Ca.sub.5 R.sub.2 XO.sub.12 in which R is either Nb or Ta and X is selected from Ti and Ti.sub.1-x Zr.sub.x, have high dielectric constants (Ks), relatively low dielectric losses (Q), and low TCKs. The dielectric properties are affected by processing conditions, which for the both the niobate and tantalate embodiments preferably involve sintering and re-firing dielectric pellets at temperatures of 1400.degree. C. and above. The dielectric materials are particularly useful for microwave communications applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.