MOS transistors having vertical current flow

US6093948A · kind A · utility

Assignees

• Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno · IT
• STMicroelectronics SA

Inventors

• Raffaele Zambrano · Catania, IT
• Carmelo Magro · Catania, IT

Key dates

• Filing date: Aug 5, 1994
• Grant date: Jul 25, 2000
• Expiry date: Aug 5, 2014

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/126

Abstract

The process provides first for the accomplishment of low-doping body regions at the sides and under a gate region and then the accomplishment of high-doping body regions inside said low-doping body regions and self-aligned with said gate region. There is thus obtained an MOS power transistor with vertical current flow which has high-doping body regions self-aligned with said gate region and with a reduced junction depth.