Higher power gallium nitride schottky rectifier
US6093952A · kind A · utility
16Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1999 |
| Grant date | Jul 25, 2000 |
| Priority date | — |
| Expiry date | Mar 31, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02293
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Schottky high power rectifier having a nitride insulator formed on the surface of a GaN substrate. The nitride insulator increases the electric field breakdown suppression at or near the surface of the rectifier below the insulator. In a preferred embodiment, the nitride insulator is an epitaxially grown aluminum nitride insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.