Instantaneous synthesis of refractory nitrides from solid precursors

US6096282A · kind A · utility

Assignee

• The Regents of the University of California · US

Inventors

• Richard B. Kaner · Santa Monica, US
• Charles H. Wallace · Portland, US
• Thomas K Reynolds · Riverside, US

Key dates

• Filing date: Apr 23, 1998
• Grant date: Aug 1, 2000
• Expiry date: Apr 23, 2018

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01P2004/62
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A process for forming high quality crystalline refractory materials, particularly gallium (III) nitride (GaN), from solid precursors. By blending dry reactants, including NH.sub.4 Cl, in an oxygen and moisture free environment, placing the reactants in a reaction vessel and in an inert environment, rapidly exposing the reactants to a temperature in excess of about 225.degree. C. The soluble salt by-products are then extracted from the resultant mixture, leaving high purity crystals of the nitride in the form of a fine powder.