Method of making a semiconductor device
US6096582A · kind A · utility
52Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 1997 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Jul 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device is disclosed in which the device has an insulated gate transistor in which source and drain regions are provided in a single crystal semiconductor layer formed on an insulating layer with a channel region interposed between the source and drain regions. The insulating layers just below the source and drain regions are made thicker than an insulating layer just below the channel region. The method uses substrate bonding to achieve the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.