Method of manufacturing thin film transistor
US6096585A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1997 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Dec 1, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13454
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor (TFT) is provided with a precisely, lightly doped drain (LDD) structure formed on a substrate of insulators, such as a glass sheet. A method of making the TFT and a liquid crystal display device with the same are disclosed. The TFT with the LDD structure include a side wall and a gate insulation layer. An intermediate layer is provided between the side wall and the gate insulation layer. The intermediate layer is different in layer property from the side wall. When the side wall is formed by an anisotropic etching process, the etching can be stopped on the surface of intermediate layer. As a result, the gate insulation layer and the substrate are protected against the etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.