Method of chemical mechanical planarization using copper coordinating ligands
US6096652A · kind A · utility
44Cited by
8References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1997 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Nov 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of CMP of the semiconductor device where the method comprises the sequential steps of providing a semiconductor device, forming a copper layer on the semiconductor device and planarizing the copper layer with a medium. The medium comprises an abrasive component and a chemical solution. The chemical solution comprises water, an oxidizing agent, a first coordinating ligand adapted to form a complex with Cu(I) and a second coordinating ligand adapted to form a complex with Cu(II).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.