Semiconductor device and a method of manufacturing thereof
US6097052A · kind A · utility
11Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1997 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Jun 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact hole having an opening diameter smaller than the minimum dimension that can be formed by photolithographic technique is formed. Using an interlayer insulating film 8 formed on a semiconductor substrate as an etching mask, etching is carried out halfway to form an opening 8a. The etching mask is removed, and a TEOS film 10 is formed on the interlayer oxide film 8. The whole surface is then etched anisotropically to form a contact hole 11.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.