Location of defects using dye penetration
US6097484A · kind A · utility
11Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1999 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Jul 15, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/9501
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for amplifying defects connected to a top surface of a semiconductor device comprises the steps of applying a dye, removing the dye, and applying a developing gel. The dye enters into defects connected to the top surface of the semiconductor device. After removal of the dye from the top surface and application of the developing gel, the dye contained within the defects leaches into the developing gel to form defect indications. These defect indications have a better optical visibility than the defects themselves. An apparatus for performing this method is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.