Ferroelectric memory used for the RFID system, method for driving the same, semiconductor chip and ID card
US6097622A · kind A · utility
54Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1997 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Jun 3, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory having a memory cell array or a plurality of memory cell arrays, word lines, where each memory cell array includes word lines. The memory also includes a plurality of plate lines, where each memory cell array includes some of the plate lines and the word line corresponds with some of the plate lines, a bit line, a word line select circuit for selecting among the word lines, and plurality of plate line select circuits, where each of the plate line select circuit is coupled to an associated plate line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.