Non-volatile, static random access memory with high speed store capability
US6097629A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1998 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Sep 30, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4125
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a non-volatile, static random access memory (nvSRAM) device that is capable of high speed copying of the data in the static random access portion of the device into the non-volatile portion of the device after the detection of possible loss of power. This is accomplished by preparing the non-volatile portion for receiving a bit of data from the SRAM portion before the possible loss of power is detected, i.e., pre-arming the device. In one embodiment, the pre-arming is accomplished by erasing the non-volatile portion during the time when the power supply is stable and data can be transferred between the SRAM portion and the exterior environment. In another embodiment, pre-arming is accomplished by erasing the non-volatile portion immediately after power has been provided to the device and data from the non-volatile portion has been copied into the SRAM in a recall operation. Another aspect of the invention provides for the decoupling of the erase and store operations. This facilitate, for example, the erase of the data in the non-volatile portion of the nvSRAM without a subsequent copying of data in the SRAM portion into the non-volatile portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.