System and method for programming nonvolatile memory
US6097639A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1998 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Dec 29, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5628
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system for programming a nonvolatile memory includes a plurality of memory cells each having a field effect transistor with a control gate, a drain, a source, and a charge storage region, voltage sources for applying preset voltages pertinent to a threshold level to the source, the drain, and the control gate in each of the memory cells, a monitor for monitoring a current flowing through a channel in each of the memory cells, and a controller for stopping at least one of the voltages applied to the source, the drain, and the control gate in each of the memory cells when the monitor senses that the current flowing through the channel in the memory cell reaches a reference current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.