High-power external-cavity optically-pumped semiconductor lasers
US6097742A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1999 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Mar 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/183
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation. Particular features of the OPS-lasers include a heat sink-assembly for cooling the OPS-structure, a folded resonator concept for providing optimum beam size at optically-nonlinear crystals used for frequency conversion, preferred selection of optically-nonlinear materials for frequency-conversion, and compound resonator designs for amplifying second harmonic-radiation for subsequent conversion to third or fourth harmonic radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.