MOCVD processes using precursors based on organometalloid ligands
US6099903A · kind A · utility
25Cited by
3References
25Claims
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Key dates
| Filing date | May 19, 1999 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | May 19, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F15/065
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.