Method of manufacturing a semiconductor device
US6100193A · kind A · utility
113Cited by
6References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1997 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Sep 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET in which the gate electrode is formed of a polycrystalline silicon film, a silicon nitride film having a nitrogen surface density of lens than 8.times.10.sup.14 cm.sup.-2, and a tungsten film--these films formed one upon another in the order mentioned. The gate electrode thus formed, serves to shorten the delay time of the MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.