InP-based HEMT with superlattice carrier supply layer
US6100542A · kind A · utility
11Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1997 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Nov 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4732
Abstract
A semiconductor device includes a semi-insulating substrate. A channel layer is formed on the semi-insulating substrate. An electron supply layer is formed on the semi-insulating substrate for generating a two-dimensional electron gas. The electron supply layer includes a doped superlattice layer. The superlattice layer includes layers of In.sub.X Al.sub.1-X As and layers of In.sub.Y Al.sub.1-Y As which alternate with each other, where 0.ltoreq.X.ltoreq.1.0 and 0.ltoreq.Y.ltoreq.1.0, and X differs from Y.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.