Electron emissive film and method
US6100628A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1999 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | May 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming an electron emissive film (200, 730, 830) includes the steps of: (i) evaporating a graphite source (120, 620) in a cathodic arc deposition apparatus (100, 600) to create a carbon plasma (170, 670), (ii) applying a potential difference between the graphite source (120, 620) and a glass or silicon deposition substrate (130, 630, 710, 810) for accelerating the carbon plasma (170, 670) toward the deposition substrate (130, 630, 710, 810), (iii) providing a working gas within the cathodic arc deposition apparatus (100, 600), and (ii) depositing the carbon plasma (170, 670) onto the deposition substrate (130, 630, 710, 810).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.